s9979 s9979 is a fft-ccd area image sensor specifically designed for low-light-level detection in scientific applications. in particu lar, this image sensor is ideally suited for extremely low-light-level detection in such fields as spectroscopy and astronomy. by operating this image sensor in mpp mode, the dark current can be exceedingly reduced. moreover, use of the low-noise readout amplifier enables low-light-level detection and long integration time, thus achieving a wide dynamic range. s9979 has an effective pixel size of 48 48 m and is available in active area of 73.728 (h) 6.144 (v) mm. features l tdi (time delay integration) operation l 1536 (h) 128 (v) pixel format l pixel size: 48 48 m l 100 % fill factor l wide dynamic range: 20000 l low dark signal: 2 ke - /pixel/s typ. (mpp mode) l low readout noise: 60 e - rms typ. l mpp operation applications l industrial inspection l low-light-level detection image sensor ccd area image sensor tdi operation / large active area ccd preliminary data sep. 2005 specification type no. cooling number of total pixels number of active pixels active area [mm (h) mm(v)] s9979 non-cooled 1536 128 1536 128 73.728 6.144 general ratings parameter specification ccd structure full frame transfer or tdi fill factor 100 % number of active pixels 1536 (h) 128 (v) pixel size 48 (h) 48 (v) m ccd active area 73.728 (h) 6.144 (v) mm vertical clock phase 2 phase horizontal clock phase 2 phase output circuit two-stage mosfet source follower with load resistance package 28-pin ceramic package window * 1 quartz window (standard) temporarily attached window is available *1: temporary window type (ex. s9979n) and uv coat type (ex. s9979uv) are available upon request. temporary window is fixed by tape to protect the ccd chip and wire bonding. 1 what is tdi operation in fft-ccd, tdi operation performs continuous imaging of a fast-moving object, by transferring the signals at the same rate as the speed of the moving object. tdi operation allows acquiring continuous, clear images with high s/n and no frame breaks. since signals of all pixels in each row are accumulated, sensitivity variations can be drastically improved compared to two-dimensional operation. signal transfer object movement charge capacity time1 time2 time3 1 line m line signal integration by tdi operation kmpdc0139ea
ccd area image sensor s9979 2 absolute maximum ratings (ta=25 c) parameter symbol min. typ. max. unit operating temperature topr -30 - +30 c storage temperature ts t g -30 - +70 c od voltage v od -0.5 - +20 v rd voltage v rd -0.5 - +18 v isv voltage v isv -0.5 - +18 v igv voltage v igv -15 - +15 v igh voltage v igh -15 - +15 v sg voltage v sg -15 - +15 v og voltage v og -15 - +15 v rg voltage v rg -15 - +15 v tg voltage v tg -15 - +15 v vertical clock voltage v p1av , v p2av v p1bv , v p2bv -15 - +15 v horizontal clock voltage v p1ah , v p2ah v p1bh , v p2bh -15 - +15 v operating conditions (mpp mode, ta=25 c) parameter symbol min. typ. max. unit output transistor drain voltage v od 12 15 - v reset drain voltage v rd 12 13 14 v output gate voltage v og -0.5 2 5 v output transistor ground voltage v ssa - 0 - v substrate voltage v ssd -5 0 - v vertical input source v isv - v rd - vertical input gate v igv -8 0 - te s t p o i n t horizontal input gate v igh -8 0 - v high v p1avh , v p2avh v p1bvh , v p2bvh 036 vertical shift register clock voltage low v p1avl , v p2avl v p1bvl , v p2bvl -9 -8 -7 v high v p1ahh , v p2ahh v p1bhh , v p2bhh 0 3 6 horizontal shift register clock voltage low v p1ahl , v p2ahl v p1bhl , v p2bhl -9 -8 -7 v high v sgh 036 summing gate voltage low v sgl -9 -8 -7 v high v rgh 0 3 6 reset gate voltage low v rgl -9 -8 -7 v high v tgh 036 transfer gate voltage low v tgl -9 -8 -7 v electrical characteristics (ta=25 c) parameter symbol remark min. typ. max. unit signal output frequency fc - 2 4 mhz reset clock frequency frg - 2 4 mhz vertical shift register capacitance c p1av , c p2av c p1bv, c p2bv - 15000 - pf horizontal shift register capacitance c p1ah , c p2ah c p1bh , c p2bh - 500 - pf summing gate capacitance c sg -15- pf reset gate capacitance c rg - 10 - pf transfer gate capacitance c tg - 500 - pf transfer efficiency cte * 2 0.99995 0.99999 - dc output level vout * 3 5811v output impedance zo * 3 - 500 - ? power dissipation p * 3, * 4 -60-mw *2: measured at half of the full well capacity. cte is defined per pixel. *3: v od =15 v *4: power dissipation of the on-chip amplifier
ccd area image sensor s9979 50 40 30 20 10 0 200 400 300 500 600 700 wavelength (nm) 800 900 1000 1100 1200 quantum efficiency (%) (typ. ta=25 ?c) uv coat 3 electrical and optical characteristics (ta=25 c, unless otherwise noted) parameter symbol remark min. typ. max. unit saturation output voltage vsat - fw sv - v vertical 600 1200 - horizontal 600 1200 - full well capacity summing fw 600 1200 - ke - ccd node sensitivity sv * 5 0.45 0.6 - v/e - dark current (mpp mode) ds * 6 - 2 8 ke - /pixel/s readout noise nr * 7 - 60 120 e - rms dynamic range dr * 8 5000 20000 - photo response non-uniformity prnu * 9 -310% spectral response range - 400 to 1100 - nm white spots - - 0 point defects * 10 black spots - - 0 cluster defects * 11 --0 blemish column defects - * 12 --0 - *5: v od =15 v. *6: dark current doubles for every 5 to 7 c. *7: -40 c, operating frequency is 2 mhz. *8: dynamic range = full well capacity / readout noise *9: measured at the half of the full well capacity prnu (%) = noise / signal 100 noise: fixed pattern noise (peak to peak) *10: white spots > 20 times of max. dark signal (8 ke - /pixel/s). black spots pixels whose sensitivity is lower than one-half of the average pixel output (measured with uniform light producing one-half of the saturation charge) *11: 2 to 9 contiguous defective pixels. *12: 10 or more contiguous defective pixels. spectral response (without window) kmpdb0244eb
ccd area image sensor s9979 ...... 1 2 3 4 5 6 234 125 126 127 128 s1 s2 s3 s4 s5 s6 s1531 s1532 s1533 s1534 s1535 s1536 ...... ...... 1531 1532 1533 1534 1535 1536 isv 15 23 igv p1bv p2bv p1av p2av tg rg rd ssa os od og sg p2ah p1ah p2bh p1bh igh ssd s1, ... , s1536: active area 24 25 26 27 28 1 2 3 4 5 6 7 8 9 11 12 13 14 4 device structure pixel format left horizontal direction right blank optical black isolation effective isolation optical black blank 0 0 0 1536 0 0 0 top vertical direction bottom isolation effective isolation 0 128 0 kmpdc0234ea timing chart (tdi operation) p1av, p1bv p2av, p2bv tg p1ah, p1bh p2ah, p2bh sg rg os enlarged view tpwv to v r tpwr tg p1ah, p1bh p2ah, p2bh sg rg os s2 s3 s1 s4 s5 s1535 s1536 tpwh, tpws kmpdc0142eb
ccd area image sensor s9979 5 timing chart (tdi operation, 2 2 pixel binning) p1av, p1bv p2av, p2bv tg p1ah, p1bh p2ah, p2bh sg rg os enlarged view tpwv to v r tpwr tg p1ah, p1bh p2ah, p2bh sg rg os s1 + s2 s3 + s4 s1535 + s1536 tpwh, tpws kmpdc0111ec parameter symbol remark min. typ. max. unit pulse width tpwv 30 60 - s p1av, p1bv, p2av, p2bv, tg rise and fall time tprv, tpfv * 13, * 14 200 - - ns pulse width tpwh 125 250 - ns rise and fall time tprh, tpfh 10 - - ns p1ah, p1bh, p2ah, p2bh duty ratio * 14 - 50 - % pulse width tpws 125 250 - ns rise and fall time tprs, tpfs 10 - - ns sg duty ratio - 50 - % pulse width tpwr 10 50 - ns rg rise and fall time tprr, tpfr 5 - - ns tg-p1ah, p1bh overlap time tovr 10 20 - s *13: tg terminal can be short-circuited to p2av terminal. *14: the clock pulses should be overlapped at 50 % of clock pulse amplitude.
ccd area image sensor s9979 87.0 28 27 16 15 pin no. 1 2 13 14 2.54 0.46 33.02 15.0 15.24 0.25 2.5 1.3 0.5 quartz window photosensitive surface index mark tdi direction 6 kmpda0203eb dimensional outline (unit: mm) pin connections pin no. symbol description remark 1 rg reset gate 2 rd reset drain 3 ssa analog ground 4 os output transistor source 5 od output transistor drain 6 og output gate 7 sg summing gate 8 p2ah ccd horizontal register clock a-2 9 p1ah ccd horizontal register clock a-1 10 nc 11 ssd digital ground 12 p2bh ccd horizontal register clock b-2 same timing as p2ah 13 p1bh ccd horizontal register clock b-1 same timing as p1ah 14 igh test point (horizontal input gate) 15 isv test point (vertical input source) shorted to rd 16 to 22 nc 23 igv test point (vertical input gate) 24 p1bv ccd vertical register clock b-1 same timing as p1av 25 p2bv ccd vertical register clock b-2 same timing as p2av 26 p1av ccd vertical register clock a-1 27 p2av ccd vertical register clock a-2 28 tg transfer gate precautions for use (electrostatic countermeasures) handle these sensors with bare hands or wearing cotton gloves. in addition, wear anti-static clothing or use a wrist band with an earth ring, in order to prevent electrostatic damage due to electrical charges from friction. avoid directly placing these sensors on a work-desk or work-bench that may carry an electrostatic charge. provide ground lines or ground connection with the work-floor, work-desk and work-bench to allow static electricity to dis- charge. ground the tools used to handle these sensors, such as tweezers and soldering irons. it is not always necessary to provide all the electrostatic measures stated above. implement these measures according to the amount of damage that occurs. element cooling/heating temperature incline rate when cooling the ccd by an externally attached cooler, set the cooler operation so that the temperature gradient (rate of temperature change) for cooling or allowing the ccd to warm back is less than 5 k/minute.
ccd area image sensor s9979 hamamatsu photonics k.k., solid state division 1126-1 ichino-cho, higashi-ku, hamamatsu city, 435-8558 japan, telephone: (81) 53-434-3311, fax: (81) 53-434-5184, www.hamamats u.com u.s.a.: hamamatsu corporation: 360 foothill road, p.o.box 6910, bridgewater, n.j. 08807-0910, u.s.a., telephone: (1) 908-231-0 960, fax: (1) 908-231-1218 germany: hamamatsu photonics deutschland gmbh: arzbergerstr. 10, d-82211 herrsching am ammersee, germany, telephone: (49) 8152- 375-0, fax: (49) 8152-265-8 france: hamamatsu photonics france s.a.r.l.: 19, rue du saule trapu, parc du moulin de massy, 91882 massy cedex, france, teleph one: 33-(1) 69 53 71 00, fax: 33-(1) 69 53 71 10 united kingdom: hamamatsu photonics uk limited: 2 howard court, 10 tewin road, welwyn garden city, hertfordshire al7 1bw, unit ed kingdom, telephone: (44) 1707-294888, fax: (44) 1707-325777 north europe: hamamatsu photonics norden ab: smidesv ? gen 12, se-171 41 solna, sweden, telephone: (46) 8-509-031-00, fax: (46) 8-509-031-01 italy: hamamatsu photonics italia s.r.l.: strada della moia, 1 int. 6, 20020 arese, (milano), italy, telephone: (39) 02-935-81 -733, fax: (39) 02-935-81-741 information described in this material is current as of march, 2011. product specifications are subject to change without prior notice due to improvements or other reasons. before assembly into final products, please contact us for the delivery specification sheet to check the latest information. type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(x)" which means preliminary specifications or a suffix "(z)" which means developmental specifications. the product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovere d and reported to us within that one year period. however, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. cat. no. kmpd1091e04 mar. 2011 dn 7
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